Semiconductor device manufacturing method
US9472391B2 · kind B2 · utility
11Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.