Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9472397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Sep 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.