Power semiconductor switch with plurality of trenches
US9472403B2 · kind B2 · utility
4Cited by
93References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2010 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.