Manufacturing method of semiconductor device
US9472467B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Mar 3, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Apr 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device including a semiconductor substrate having a first surface and a second surface, and having a gallium nitride-containing layer provided on the first surface of the semiconductor substrate includes grinding, polishing, and etching the second surface of the semiconductor substrate of which a thickness is d1, and reducing the thickness of the semiconductor substrate to one-fifth or less of d1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.