Patent · US Active

Nanowire CMOS structure and formation methods

US9472468B2 · kind B2 · utility

9Cited by

0References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Mark van Dal · Linden, BE
Aryan Afzalian · Chastre, BE
Gerben Doornbos · Kessel-Lo, BE

Key dates

Filing date	Dec 11, 2014
Grant date	Oct 18, 2016
Priority date	—
Expiry date	Dec 11, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/85
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method includes growing a nanowire from a substrate, forming a sacrificial layer surrounding the nanowire, removing the nanowire from the sacrificial layer to form an opening in the sacrificial layer, and growing a replacement semiconductor nanowire in the opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.