Semiconductor device having electrode made of high work function material and method of manufacturing the same
US9472637B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Feb 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes: an insulating film disposed on a substrate; and a metal film disposed on the insulating film to directly contact the insulating film, the metal film including a laminated structure where a first metal film and a second metal film are alternately and repeatedly laminated, wherein the second metal film has a work function different from that of the first metal film and is different from the first metal film in material, and an oxidation resistance of the first metal film is greater than that of the second metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.