Bidirectional power transistor with shallow body trench
US9472662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Sep 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/105
Abstract
A bi-directional trench field effect power transistor. A layer stack extends over the top surface of the substrate, in which vertical trenches are present. An electrical path can be selectively enabled or disabled to allow current to flow in opposite directions through a body located laterally between the first and second vertical trenches. A shallow trench, more shallow than the first vertical trench and the second vertical trench is located between the first vertical trench and the second vertical trench and extend in the vertical direction from the top layer of the stack into the body, beyond an upper boundary of the body. The body is provided with a dopant, the concentration of the dopant is at least one order of magnitude higher in a region adjacent to the shallow trench than near the first vertical trench and the second vertical trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.