Capacitive acceleration sensor with an H-shaped beam and preparation method thereof

US9476906B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Lufeng Che · Shanghai, CN
• Xiaofeng Zhou · Shanghai, CN
• Bin Xiong · Hubei, CN
• Yuelin Wang · Shanghai, CN

Key dates

• Filing date: Dec 3, 2012
• Grant date: Oct 25, 2016
• Expiry date: Jul 11, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G01P2015/0822
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween:√{square root over (2)}(a+b+c)<h, √{square root over (2)}d<h.