Variable resistance memory apparatus, manufacturing method thereof
US9478281B2 · kind B2 · utility
2Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 9, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Aug 17, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance memory apparatus and a method of manufacturing the same are provided. The variable resistance memory apparatus includes a plurality of memory cells. Each of the memory cells includes a plurality of data storage regions. The plurality of data storage regions have different widths from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.