Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
US9478413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2012 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Sep 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing the predetermined elements, nitrogen and carbon is formed on the substrate by alternately performing, a predetermined number of times, a process of supplying a first source gas containing a predetermined element and a halogen group to the substrate and a process of supplying a second source gas containing a predetermined element and an amino group to the substrate; a step wherein a second layer is formed by modifying the first layer by supplying an amine-based source gas to the substrate; and a step wherein a third layer is formed by modifying the second layer by supplying a reaction gas that is different from the source gases to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.