Method for depositing a group III nitride semiconductor film
US9478420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Apr 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface of the heater, and depositing a Group III nitride semiconductor film onto the conditioned surface of the substrate by a physical vapour deposition method whilst the substrate is held away from the substrate facing surface of the heater and forming an epitaxial Group III nitride semiconductor film with N-face polarity on the conditioned surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.