SiC transient voltage suppressor
US9478606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2015 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Feb 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
Abstract
A high power, high current Unidirectional Transient Voltage Suppressor, formed on SiC starting material is disclosed. The device is structured to avalanche uniformly across the entire central part (active area) such that very high currents can flow while the device is reversely biased. Forcing the device to avalanche uniformly across designated areas is achieved in different ways but consistently in concept, by creating high electric fields where the device is supposed to avalanche (namely the active area) and by relaxing the electric field across the edge of the structure (namely in the termination), which in all embodiments meets the conditions for an increased reliability under harsh environments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.