Semiconductor devices and methods of fabricating the same

US9478618B1 · kind B1 · utility

Assignee

• SK hynix Inc. · KR

Inventor

• Jun Taek Park · Seoul, KR

Key dates

• Filing date: Mar 25, 2016
• Grant date: Oct 25, 2016
• Expiry date: Mar 25, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor device includes a fin-shaped active region protruding from a surface of a base substrate. The fin-shaped active region includes a first impurity region and a second impurity region spaced apart from each other along a first direction and a channel region disposed between the first and second impurity regions. A trench is provided in the base substrate under the channel region. The trench extends in a second direction to intersect the fin-shaped active region in a plan view. A blocking layer fills the trench to overlap with the channel region of the fin-shaped active region. A gate is disposed to overlap with blocking layer and the channel region.