Protection layer on fin of fin field effect transistor (FinFET) device structure
US9478660B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2015 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Apr 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.