Semiconductor device
US9478664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Dec 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.