High-speed germanium on silicon avalanche photodiode

US9478689B2 · kind B2 · utility

Assignee

• SiFotonics Technologies Co., Ltd. · KY

Inventors

• Mengyuan Huang · Cupertino, US
• Pengfei Cai · Beijing, CN
• Liangbo Wang · Beijing, CN
• Su Li · Beijing, CN
• Wang Chen · Beijing, CN
• Ching-yin Hong · Lexington, US
• Dong Pan · Taipei, TW

Key dates

• Filing date: Dec 7, 2015
• Grant date: Oct 25, 2016
• Expiry date: Dec 7, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.