Semiconductor structures including liners comprising alucone and related methods
US9484196B2 · kind B2 · utility
10Cited by
8References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Feb 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.