Oxide sputtering target, thin film transistor using the same, and method for manufacturing thin film transistor
US9484200B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Oct 9, 2013 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Feb 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.