Methods of manufacturing semiconductor devices
US9484203B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2014 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Nov 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.