Preparation method of a germanium-based schottky junction

US9484208B2 · kind B2 · utility

Assignee

• Peking University · CN

Inventors

• Ru Huang · Beijing, CN
• Meng Lin · Beijing, CN
• Zhiqiang Li · Jinan, CN
• Xia An · Beijing, CN
• Ming Li · Hong Kong, CN
• Quanxin Yun · Beijing, CN
• Min Li · Taichung, TW
• Pengqiang Liu · Beijing, CN
• Xing Zhang · Hefei, CN

Key dates

• Filing date: Sep 30, 2013
• Grant date: Nov 1, 2016
• Expiry date: Feb 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/649
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention discloses a preparation method of a germanium-based Schottky junction, comprising, cleaning a surface of N-type germanium-based substrate, then depositing a layer of CeO2 on the surface, and further depositing a layer of metal. The stability Ce—O—Ge bonds can be formed at the interface after rare earth oxides CeO2 are in contact with the germanium substrate, and this is beneficial to reduce the interface state density, improve the quality of the interface, and reduce the MIGS and suppress Fermi-level pinning. Meanwhile, the tunneling resistance introduced by CeO2 between the metal and the germanium substrate is smaller relative to the case of Si3N4, Al2O3, Ge3N4 or the like. In view of the excellent surface characteristics and small conduction band offset relative to the germanium substrate, interposing of the CeO2 dielectric layer is applicable to the preparation the germanium-based Schottky junction having a low resistivity.