Bipolar semiconductor device and method of manufacturing thereof

US9484221B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerhard Schmidt · Graz, AT
• Josef Bauer · Munich, DE

Key dates

• Filing date: Jan 13, 2014
• Grant date: Nov 1, 2016
• Expiry date: Aug 9, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/617
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device has a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. The semiconductor body includes an n-doped first semiconductor region spaced apart from the first metallization and having a first maximum doping concentration, an n-doped second semiconductor region having a second maximum doping concentration higher than the first maximum doping concentration and adjoining the first semiconductor region, and a third semiconductor region in ohmic contact with the second metallization, arranged between the second metallization and the second semiconductor region, and adjoining the second semiconductor region. The second semiconductor region is made of a semiconductor material which includes electrically active chalcogen impurities as donors. At least 90% of the electrically active chalcogen impurities form isolated defects in the semiconductor material.