Microfluidic impingement jet cooled embedded diamond GaN HEMT
US9484284B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2016 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Mar 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opposite to a microchannel. A silicon manifold is coupled to the substrate and includes a plurality of micro-machined channels formed therein that include a jet impingement channel positioned directly adjacent each microchannel, a return channel directly positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.