Word line hook up with protected air gap
US9484314B2 · kind B2 · utility
7Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2015 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Aug 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming a plurality of word lines separated by air gaps with contact pad structures connected to the word lines, and forming a dummy structure directly opposite an air gap between neighboring word lines. Subsequently, the contact pad structures are cut into individual contact pads by a contact pad cut that intersects the dummy structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.