Crystalline multiple-nanosheet III-V channel FETs
US9484423B2 · kind B2 · utility
12Cited by
34References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2014 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | May 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A field effect transistor includes a body layer comprising a crystalline semiconductor channel region therein, and a gate stack on the channel region. The gate stack includes a crystalline semiconductor gate layer, and a crystalline semiconductor gate dielectric layer between the gate layer and the channel region. Related devices and fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.