Pure boron for silicide contact
US9484431B1 · kind B1 · utility
4Cited by
15References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2015 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Jul 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench contacts over and abutting an interfacial layer portion of at least one of the source region and the drain region; wherein the interfacial layer includes boron in an amount in a range from about 5×1021 to about 5×1022 atoms/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.