LED structures for reduced non-radiative sidewall recombination
US9484492B2 · kind B2 · utility
34Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2015 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Sep 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/854
Abstract
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.