Organic photo diode with dual electron blocking layers

US9484537B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chin-Wei Liang · Hengshan, TW
• Hsing-Lien Lin · Hsinchu, TW
• Cheng-Yuan Tsai · Taipei, TW
• Chia-Shiung Tsai · Jinshanmian, TW

Key dates

• Filing date: Aug 28, 2013
• Grant date: Nov 1, 2016
• Expiry date: Aug 28, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current.