Voltage equalization for stacked FETs in RF switches
US9484973B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2010 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Jun 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/52
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A switch branch that improves voltage uniformity across a series stack of an n-number of transistors is disclosed. A first one of the n-number of transistors is coupled to an input terminal, and an nth one of the n-number of transistors is coupled to an output terminal, where n is a positive integer greater than one. Predetermined parasitic capacitances associated with each of the n-number of transistors are adjustable with respect to capacitance value by predetermined amounts by dimensioning and arranging at least one metal layer element in proximity to the series stack of the n-number of transistors. Capacitance values for the predetermined parasitic capacitances are selected such that a voltage across the series stack of the n-number of transistors is uniformly distributed. In this way, the n-number of transistors can be reduced without risking a transistor breakdown within the series stack of the n-number of transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.