Back-side etching and cleaving of substrates
US9488777B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Nov 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7806
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabrication technique for cleaving a substrate in an integrated circuit is described. During this fabrication technique, a trench is defined on a back side of a substrate. For example, the trench may be defined using photoresist and/or a mask pattern on the back side of the substrate. The trench may extend from the back side to a depth less than a thickness of the substrate. Moreover, a buried-oxide layer and a semiconductor layer may be disposed on a front side of the substrate. In particular, the substrate may be included in a silicon-on-insulator technology. By applying a force proximate to the trench, the substrate may be cleaved to define a surface, such as an optical facet. This surface may have high optical quality and may extend across the substrate, the buried-oxide layer and the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.