Reliability-optimized selective voltage binning
US9489482B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jun 15, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for improving integrated circuit (IC) chip reliability. In the method, IC chips, which are manufactured according to a given IC chip design, are sorted into multiple different groups associated with different process windows in the process distribution for the design. Different operating voltages are assigned to the different groups, respectively, in order to optimize overall reliability of IC chips across the process distribution. That is, each group is associated with a specific process window, comprises a specific portion of the IC chips and is assigned a group-specific operating voltage that minimizes the fail rate of the specific portion of the IC chips and that, thereby optimizes the reliability of the specific portion of the IC chips. The group-specific operating voltage will be within minimum and maximum voltages associated with either the process distribution or the specific process window (e.g., following power-optimized selective voltage binning).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.