Patent · US Active

Plasma processing apparatus and method

US9490105B2 · kind B2 · utility

5Cited by
31References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 1, 2013
Grant dateNov 8, 2016
Priority date
Expiry dateNov 6, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S156/915
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.