Cu-low K cleaning and protection compositions
US9490142B2 · kind B2 · utility
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Key dates
| Filing date | Apr 9, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Apr 9, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.