Apparatus and method for depositing a layer onto a substrate
US9490166B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2011 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Dec 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus (1, 26) for depositing a layer (37, 38, 39) on a substrate (2) in a process gas comprises a chuck (3) comprising a first surface (4) for supporting the substrate (2), a clamp (4) for securing the substrate (2) to the first surface (14) of the chuck (3), an evacuatable enclosure (5) enclosing the chuck (3) and the clamp (4) and comprising an inlet, through which the processing gas is insertable into the enclosure (5), and control apparatus (19). The control apparatus (19) is adapted to move at least one of the chuck (3) and the clamp (4) relative to, and independently of, one another to adjust a spacing between the chuck (3) and the clamp (4) during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure (5) that is less than atmospheric pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.