Semiconductor device and method for fabricating the same
US9490258B2 · kind B2 · utility
8Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.