Optoelectronic integrated circuit
US9490321B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18358
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.