Patent · US Active

Wafer formed by slicing an ingot

US9490326B2 · kind B2 · utility

0Cited by
0References
2Claims
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Assignee

Inventors

Key dates

Filing dateApr 29, 2015
Grant dateNov 8, 2016
Priority date
Expiry dateApr 29, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24777
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The instant disclosure relates to a wafer formed by slicing an ingot. The wafer has at least one side surface adjacent to the slicing path and topped with a nanostructure layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.