Structure and formation method of fin-like field effect transistor
US9490365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Sep 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.