Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions
US9490421B2 · kind B2 · utility
5Cited by
5References
48Claims
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Key dates
| Filing date | Jan 28, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jun 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.