Integrated circuit structures with spin torque transfer magnetic random access memory ultilizing aluminum metallization layers and methods for fabricating the same
US9490423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
STT-MRAM integrated circuits employing aluminum metallization layers and methods for fabricating the same are disclosed. A method for fabricating an integrated circuit includes forming a first metallization layer including an aluminum material, forming a magnetic tunnel junction (MTJ) structure over the first metallization layer, and forming an encapsulation layer over the MTJ structure and over the first metallization layer. The method further includes etching the encapsulation layer and the first metallization layer to form an encapsulation segment overlying a first metal line, forming a contact plug to the MTJ structure, and forming a second metal line including an aluminum material over the contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.