Sub-lithographic patterning of magnetic tunneling junction devices
US9490424B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 6, 2016 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | May 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer. Such a method further includes depositing a film into the recess to create a keyhole pattern within the deposited film. The method further includes transferring the keyhole pattern through a hard mask layer to an MTJ stack. The method also includes depositing a conductive material into the transferred keyhole pattern and on an MTJ stack. The method also includes removing the hard mask layer to create a conductive hard mask pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.