Gate drive control system for SiC and IGBT power devices
US9490798B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/04206
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and a comparator that compares output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generate a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the comparator indicates that the output signal of the power semiconductor device has changed relative to the reference value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.