Method of fabricating crystalline silicon ingot including nucleation promotion layer
US9493357B2 · kind B2 · utility
1Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Mar 9, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Mar 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/259
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.