Patent · US Active

Copper electrodeposition in microelectronics

US9493884B2 · kind B2 · utility

0Cited by
35References
13Claims
0Family size

Inventors

Key dates

Filing dateDec 17, 2013
Grant dateNov 15, 2016
Priority date
Expiry dateNov 7, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76879
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.