Random access memory and memory access method thereof
US9496014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | May 26, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a random access memory and the memory access method thereof capable of avoiding read disturbance and increasing reading speed. An embodiment of the said random access memory comprises: a word line; a word line driving unit, coupled to the word line, operable to receive an access control signal to generate a word line enablement voltage; a voltage adjusting unit including a switch and a capacitor in which the switch is coupled to the word line and operable to receive a control signal to determine a conduction state of the switch itself and the capacitor is coupled to the switch and operable to adjust a voltage level of the word line enablement voltage according to the conduction state; and a memory unit, coupled to the word line, operable to be enabled according to the word line enablement voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.