Method of forming an interconnect structure having an air gap and structure thereof
US9496169B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Feb 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacture are provided which utilize an air gap to help isolate conductive structures within a dielectric layer. A first etch stop layer is deposited over the conductive structures, and the first etch stop layer is patterned to expose corner portions of the conductive structures. A portion of the dielectric layer is removed to form an opening. A second etch stop layer is deposited to line the opening, wherein the second etch stop layer forms a stepped structure over the corner portions of the conductive structures. Dielectric material is then deposited into the opening such that an air gap is formed to isolate the conductive structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.