Method of manufacturing semiconductor devices
US9496179B2 · kind B2 · utility
4Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Aug 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming an active pattern and a gate electrode crossing the active pattern on a substrate, forming a first contact connected to the active pattern at a side of the gate electrode, forming a second contact connected to the gate electrode, and forming a third contact connected to the first contact at the side of the gate electrode. The third contact is formed using a photomask different from that used to form the first contact. A bottom surface of the third contact is disposed at a level in the device lower than the level of a top surface of the first contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.