Patent · US Active

Semiconductor devices including spacers

US9496223B2 · kind B2 · utility

8Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 16, 2016
Grant dateNov 15, 2016
Priority date
Expiry dateMar 16, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/485
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.