Nitride-enriched oxide-to-oxide 3D wafer bonding
US9496239B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Dec 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06524
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure comprising a first semiconductor structure; a second semiconductor structure; and a silicon-nitride layer configured to bond the first semiconductor structure and second semiconductor structure together. The first semiconductor structure comprises a first wafer; a first dielectric layer; a first interconnect structure; and a first oxide layer. The second semiconductor structure comprises a second wafer; a second dielectric layer; a second interconnect structure; and a second oxide layer. The structure further comprises a first nitride layer residing on a top surface of the first oxide layer formed by a nitridation process of the top surface of the first oxide layer; and a second nitride layer residing on a top surface of the second oxide layer formed by the nitridation process of the top surface of the second oxide layer. Further, the silicon-nitride layer comprises the first nitride layer and the second nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.