Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9496308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Feb 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/40
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.