Semiconductor device comprising trench structures
US9496339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2014 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell array in a semiconductor substrate. Components of transistor cells of the transistor cell array are disposed in adjacent trench structures in the semiconductor substrate. The trench structures run in a first linear direction parallel to a main surface of the semiconductor substrate. The trench structures include a plurality of concatenated trench segments in a plane parallel to the main surface in the central portion, at least one of the trench segments connecting a first point and a second point of one trench structure, the first point and the second point being arranged along the first linear direction. The trench segment comprises a portion extending in a direction different from the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.